Theory for low-dimensional quantum materials

·Surface & Interface Modeling

·Massive Manipulation & Artificial Creation

Recent publications

Recent News

季威研究组合作发现单层笼目材料新关联物态

季威研究组合作发现单层笼目材料新关联物态

Apr 4, 2025

近期，物理学院季威研究团队与武汉大学合作，成功合成单层Mo33Te56材料，获得了了近费米能级的电子平带，发现了平带电子演化导致的磁性与关联绝缘态。论文发表在《自然·通讯》上，为量子材料设计和表征测量提供了新思路与视角。

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研究组合作揭示单层二维材料中磁—电共存新机制

研究组合作揭示单层二维材料中磁—电共存新机制

Mar 5, 2025

物理学院季威教授研究组与武汉大学组成联合研究团队，通过理论计算与实验结合，揭示了单层三氯化钒（VCl3）中反铁磁性与铁电性共存的新机制，并发现范德华界面相互作用在磁-电共存中的调控作用，为二维多铁性材料的研究和新型电子器件的发展提供了重要理论依据。

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研究组二维界面磁电调控合作研究获新进展

研究组二维界面磁电调控合作研究获新进展

Dec 24, 2024

王聪副研究员、季威教授等与北京大学等机构合作，通过第一性原理计算与高精密电容测量，观察到双层石墨烯与CrOCl异质结中的磁电协同控制行为。相关成果于2024年12月发表在Advanced Materials上。

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See small, think big

Believe in seeing

  • Microscopes empower human beings the capability of seeing nanostructures. We are interested in modeling those nanostructures being seen using a STM, nc-AFM or STEM. Interplay of those nanostructure with probes, e.g. a STM tip or electron beams, is of paramount importance, modeling of which is one of our missions.
  • We, working closely with our experimental collaborators, observed the world’s first images of hydrogen bonding (Science 2013) and N…N quasi-bonding (Nat. Nanotech. 2018). The latter also verifies that the hydrogen bonding was indeed detected in the Science work.

At van der Waals gaps

  • It was believed that van der Waals (vdW) interactions do not appreciably modify electronic structures of materials. However, we recently found significant wave function overlaps at inter-block regions (known as vdW gaps) of low-dimensional materials, called covalent-like quasi-bonding, which helps predict or explain many layer-dependent bandgaps,  magnetism and electrical polarizations .
  • We recently uncovered a few  magnetic coupling mechanisms across their vdW gaps in e.g. CrI3 (PRB 2019), CrSe2 (PRB 2020 & Nat. Mater. 2021), CrTe2 (PRB 2020 & Nat. Communi. 2022), NiI2 and CrSBr, and found an OOP ferroelectricity in a MoS2/WS2 bilayer (Science 2022).

Atomic Electronics

  • Moore’s law is a visionary guideline that keeps transistors evolving in the past over 60 years. As the channel length approaches the atomic scale, now it is 12 nm (tens of atoms) in IBM or Samsung’s 2 or 3 nm CMOS techniques,  many of us believe that the atomicscale is the smallest sizescale that our devices, with novel functionalities, can work properly.
  • We are dedicated to explore and propose novel functionalities  of atomic devices, with moving the position or changing the state of an individual atom (small cluster).
  • We  proposed the world’s smallest electret and demonstrated its device functionality in a Gd@C82 devices (Nat. Nanotech. 2020). 

The Group

Group Leader

Ji, Wei

Dr. Ji, Wei
Professor of Physics
Rm. 205A, Physics Bldg. Zhongguancun North Campus, RUC

wji@ruc.edu.cn
+86-10-62515597

senier researcher

Wang, Cong

Dr. Wang, Cong
Research Assoc. Prof.
Rm. 209, Physics Bldg.
Zhongguancun North Campus, RUC

wc_phys@ruc.edu.cn
+86-10-62517997

Adjacent Member

Qiao, Jingsi

Dr. Qiao, Jingsi
Tenure-tracked Assoc. Prof.
Rm. 206, Physics Bldg.
Zhongguancun North Campus, RUC

qiaojs@ruc.edu.cn
+86-10-62517997

Post-doctoral fellow

Liu, Nanshu

Dr. Liu, Nanshu
Postdoctoral Fellow
Rm. 209, Physics Bldg. Zhongguancun North Campus, RUC

liuns@ruc.edu.cn
+86-10-62517997

PhD student

Wu, Linlu

Ms. Wu, Linlu
PhD student (P4) 
Rm. 206, Physics Bldg.
Zhongguancun North Campus, RUC

wulinlu@ruc.edu.cn
+86-10-62517997

PhD Student

Wang, Lvjing

Mr. Wang, Lvjing
PhD student (P4) 
Rm. 206, Physics Bldg.
Zhongguancun North Campus, RUC

lvjinwang@ruc.edu.cn
+86-10-62517997

Join the group. Invent the world’s smallest device

see group gallery